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IS42S32400B-6BL 参数 Datasheet PDF下载

IS42S32400B-6BL图片预览
型号: IS42S32400B-6BL
PDF下载: 下载PDF文件 查看货源
内容描述: 4Meg ×32 128兆位同步DRAM [4Meg x 32 128-MBIT SYNCHRONOUS DRAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 60 页 / 625 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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®
IS42S32400B  
ISSI  
BURST READ/SINGLE WRITE  
Four cases where CONCURRENT AUTO PRECHARGE  
occurs are defined below.  
The burst read/single write mode is entered by programming  
the write burst mode bit (M9) in the mode register to a logic 1.  
In this mode, all WRITE commands result in the access of a  
single column location (burst of one), regardless of the  
programmed burst length. READ commands access  
columns according to the programmed burst length and  
sequence, just as in the normal mode of operation (M9 = 0).  
READ with Auto Precharge  
1. Interrupted by a READ (with or without auto precharge):  
AREADtobankmwillinterruptaREADonbankn, CAS  
latency later. The PRECHARGE to bank n will begin  
when the READ to bank m is registered.  
CONCURRENT AUTO PRECHARGE  
2.InterruptedbyaWRITE(withorwithoutautoprecharge):  
AWRITEtobankmwillinterruptaREADonbanknwhen  
registered.DQMshouldbeusedthreeclockspriortothe  
WRITE command to prevent bus contention. The  
PRECHARGE to bank n will begin when the WRITE to  
bank m is registered.  
An access command (READ or WRITE) to another bank  
while an access command with auto precharge enabled is  
executing is not allowed by SDRAMs, unless the SDRAM  
supports CONCURRENT AUTO PRECHARGE. ISSI  
SDRAMs support CONCURRENT AUTO PRECHARGE.  
READ With Auto Precharge interrupted by a READ  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
CLK  
READ - AP  
BANK n  
READ - AP  
BANK m  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Idle  
COMMAND  
BANK n  
Page Active  
READ with Burst of 4  
Page Active  
Interrupt Burst, Precharge  
tRP - BANK n  
tRP - BANK m  
Internal States  
BANK m  
READ with Burst of 4  
Precharge  
BANK n,  
COL a  
BANK n,  
COL b  
ADDRESS  
DQ  
D
OUT  
a
DOUT a+1  
DOUT  
b
DOUT b+1  
CAS Latency - 3 (BANK n)  
DON'T CARE  
CAS Latency - 3 (BANK m)  
READ With Auto Precharge interrupted by a WRITE  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
CLK  
READ - AP  
BANK n  
WRITE - AP  
BANK m  
COMMAND  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Idle  
BANK n  
READ with Burst of 4  
Page Active  
Interrupt Burst, Precharge  
Page Active  
t
RP - BANK n  
tDPL - BANK m  
Internal States  
BANK m  
WRITE with Burst of 4  
Write-Back  
BANK n,  
COL a  
BANK m,  
COL b  
ADDRESS  
DQM  
DQ  
D
OUT  
a
DIN  
b
DIN b+1  
DIN b+2  
DIN b+3  
CAS Latency - 3 (BANK n)  
DON'T CARE  
48  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
PRELIMINARY INFORMATION Rev. 00G  
06/15/06  
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