欢迎访问ic37.com |
会员登录 免费注册
发布采购

IS42S32400B-6BL 参数 Datasheet PDF下载

IS42S32400B-6BL图片预览
型号: IS42S32400B-6BL
PDF下载: 下载PDF文件 查看货源
内容描述: 4Meg ×32 128兆位同步DRAM [4Meg x 32 128-MBIT SYNCHRONOUS DRAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 60 页 / 625 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IS42S32400B-6BL的Datasheet PDF文件第45页浏览型号IS42S32400B-6BL的Datasheet PDF文件第46页浏览型号IS42S32400B-6BL的Datasheet PDF文件第47页浏览型号IS42S32400B-6BL的Datasheet PDF文件第48页浏览型号IS42S32400B-6BL的Datasheet PDF文件第50页浏览型号IS42S32400B-6BL的Datasheet PDF文件第51页浏览型号IS42S32400B-6BL的Datasheet PDF文件第52页浏览型号IS42S32400B-6BL的Datasheet PDF文件第53页  
®
IS42S32400B  
ISSI  
WRITE with Auto Precharge  
4.InterruptedbyaWRITE(withorwithoutautoprecharge):  
WRITE to bank m will interrupt a WRITE on bank n when  
3. Interrupted by a READ (with or without auto precharge):  
AREADtobankmwillinterruptaWRITEonbanknwhen  
registered,withthedata-outappearing(CASlatency) later.  
The PRECHARGE to bank n will begin after tDPL is met,  
wheretDPL beginswhentheREADtobankmisregistered.  
ThelastvalidWRITEtobanknwillbedata-inregisteredone  
clock prior to the READ to bank m.  
A
registered. The PRECHARGE to bank n will begin after  
tDPL ismet,wheretDPL beginswhentheWRITEtobankm  
is registered. The last valid data WRITE to bank n will be  
data registered one clock prior to a WRITE to bank m.  
WRITE With Auto Precharge interrupted by a READ  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
CLK  
COMMAND  
BANK n  
WRITE - AP  
BANK n  
READ - AP  
BANK m  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Page Active  
WRITE with Burst of 4 Interrupt Burst, Write-Back  
DPL - BANK n  
Precharge  
t
tRP - BANK n  
Internal States  
tRP - BANK m  
BANK m  
Page Active  
READ with Burst of 4  
Precharge  
BANK n,  
COL a  
BANK m,  
COL b  
ADDRESS  
DQ  
D
IN  
a
DIN a+1  
DOUT  
b
DOUT b+1  
CAS Latency - 3 (BANK m)  
DON'T CARE  
WRITE With Auto Precharge interrupted by a WRITE  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
CLK  
COMMAND  
BANK n  
WRITE - AP  
BANK n  
WRITE - AP  
BANK m  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Page Active  
WRITE with Burst of 4  
Interrupt Burst, Write-Back  
DPL - BANK n  
Precharge  
t
t
RP - BANK n  
Internal States  
tDPL - BANK m  
BANK m  
Page Active  
WRITE with Burst of 4  
Write-Back  
BANK n,  
COL a  
BANK m,  
COL b  
ADDRESS  
DQ  
D
IN  
a
DIN a+1  
DIN a+2  
D
IN  
b
DIN b+1  
DIN b+2  
DIN b+3  
DON'T CARE  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
49  
PRELIMINARYINFORMATION Rev. 00G  
06/15/06  
 复制成功!