®
IS42S32400B
ISSI
(1,2,3)
AC ELECTRICAL CHARACTERISTICS
-6
-7
Symbol Parameter
Min.
Max.
Min.
Max.
Units
tCK3
tCK2
Clock Cycle Time
CAS Latency = 3
CAS Latency = 2
6
8
—
—
7
10
—
—
ns
ns
tAC3
tAC2
Access Time From CLK
CAS Latency = 3
CAS Latency = 2
—
—
5.4
6.5
—
—
5.4
6.5
ns
ns
tCHI
tCL
CLK HIGH Level Width
CLK LOW Level Width
Output Data Hold Time
2.5
2.5
—
—
2.5
2.5
—
—
ns
ns
tOH3
tOH2
CAS Latency = 3
CAS Latency = 2
2.7
2.7
—
—
2.7
3
—
—
ns
ns
tLZ
Output LOW Impedance Time
Output HIGH Impedance Time
Input Data Setup Time(2)
Input Data Hold Time(2)
Address Setup Time(2)
Address Hold Time(2)
CKE Setup Time(2)
CKE Hold Time(2)
Command Setup Time (CS, RAS, CAS, WE, DQM)(2)
Command Hold Time (CS, RAS, CAS, WE, DQM)(2)
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
0
—
5.4
—
0
2.7
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
67.5
45
—
5.4
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tHZ
2.7
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
60
tDS
tDH
—
—
tAS
—
—
tAH
—
—
tCKS
tCKH
tCS
—
—
—
—
—
—
tCH
—
—
tRC
—
—
tRAS
tRP
42
100K
—
100K
—
Command Period (PRE to ACT)
18
20
tRCD
tRRD
tDPL
Active Command To Read / Write Command Delay Time
Command Period (ACT [0] to ACT[1])
18
—
20
—
12
—
14
—
Input Data To Precharge
Command Delay time
12
—
14
—
tDAL
Input Data To Active / Refresh
30
—
34
—
ns
Command Delay time (During Auto-Precharge)
tMRD
tDDE
tXSR
tT
Mode Register Program Time
Power Down Exit Setup Time
Self-Refresh Exit Time
12
6
—
—
—
10
64
15
7.5
70
1
—
—
—
10
64
ns
ns
ns
ns
ms
70
1
Transition Time
tREF
Refresh Cycle Time (4096)
—
—
Notes:
1. The power-on sequence must be executed before starting memory operation.
2. Measured with tT = 1 ns. If clock rising time is longer than 1ns, (tR /2 - 0.5) ns should be added to the parameter.
3. Thereferencelevelis1.4Vwhenmeasuringinputsignaltiming. RiseandfalltimesaremeasuredbetweenVIH(min.)andVIL (max).
16
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00G
06/15/06
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
