IS42S83200B, IS42S16160B
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VDD MAX
VDDQMAX
VIN
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
InputVoltage
OutputVoltage
AllowablePowerDissipation
OutputShortedCurrent
–0.5 to +4.6
–0.5 to +4.6
–0.5 to VDD + 0.5
–1.0 to VDDQ + 0.5
1
V
V
V
VOUT
V
PD MAX
ICS
W
mA
°C
50
0 to +70
–40 to +85
TOPR
OperatingTemperature
Com.
Ind.
TSTG
StorageTemperature
–65 to +150
°C
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
2. All voltages are referenced to Vss.
DC RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
SupplyVoltage
3.0
3.0
2.0
-0.3
3.3
3.3
—
3.6
3.6
V
V
V
V
VDDQ
I/O Supply Voltage
Input High Voltage
Input Low Voltage
(1)
VIH
VDDQ + 0.3
+0.8
(2)
VIL
—
Note:
1. VIH (overshoot): VIH (max) = VDDQ +2V (PULSE WIDTH < 3ns).
2. VIL (undershoot): VIH (min) = -2V (PULSE WIDTH < 3ns).
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS (At TA = 0 to +25°C, VDD = VDDQ = 3.3 0.3V)
Symbol
Parameter
Min.
Max.
Unit
CIN1
CIN2
CI/O
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance: DQS
2.5
2.5
4.0
3.5
3.8
6.0
pF
pF
pF
Integrated Silicon Solution, Inc. — www.issi.com
15
Rev. D
07/28/08
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
