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IC42S16100E-6TL 参数 Datasheet PDF下载

IC42S16100E-6TL图片预览
型号: IC42S16100E-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 81 页 / 1082 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S16100E, IC42S16100E  
Self-Refresh Command  
Power-Down Command  
(CS, RAS, CAS, CKE = LOW, WE = HIGH)  
(CKE = LOW)  
This command executes the self-refresh operation. The  
row address to be refreshed, the bank, and the refresh  
interval are generated automatically internally during this  
operation.Theself-refreshoperationisstartedbydropping  
theCKEpinfromHIGHtoLOW.Theself-refreshoperation  
continues as long as the CKE pin remains LOW and there  
is no need for external control of any other pins. The  
self-refresh operation is terminated by raising the CKE  
pin from LOW to HIGH. The next command cannot be  
executed until the device internal recovery period (tr c )  
has elapsed. After the self-refresh, since it is impossible  
to determine the address of the last row to be refreshed,  
an auto-refresh should immediately be performed for all  
addresses (4096 cycles).  
When both banks are in the idle (inactive) state, or when  
at least one of the banks is not in the idle (inactive) state,  
this command can be used to suppress device power  
dissipation by reducing device internal operations to  
the absolute minimum. Power-down mode is started by  
dropping the CKE pin from HIGH to LOW. Power-down  
mode continues as long as the CKE pin is held low. All  
pins other than the CKE pin are invalid and none of the  
other commands can be executed in this mode. The  
power-down operation is terminated by raising the CKE  
pin from LOW to HIGH. The next command cannot be  
executed until the recovery period (tc k a ) has elapsed.  
Sincethiscommanddiffersfromtheself-refreshcommand  
described above in that the refresh operation is not  
performed automatically internally, the refresh operation  
must be performed within the refresh period (tr e f ). Thus  
the maximum time that power-down mode can be held  
is just under the refresh cycle time.  
Bothbanksmustbeplacedintheidlestatebeforeexecuting  
this command.  
Burst Stop Command  
(CS, WE, = LOW, RAS, CAS = HIGH)  
Clock Suspend  
(CKE = LOW)  
The command forcibly terminates burst read and write  
operations. When this command is executed during a  
burst read operation, data output stops after the CAS  
latency period has elapsed.  
Thiscommandcanbeusedtostopthedeviceinternalclock  
temporarily during a read or write cycle. Clock suspend  
mode is started by dropping the CKE pin from HIGH to  
LOW. Clock suspend mode continues as long as the  
CKE pin is held LOW. All input pins other than the CKE  
pin are invalid and none of the other commands can be  
executed in this mode. Also note that the device internal  
state is maintained. Clock suspend mode is terminated  
by raising the CKE pin from LOW to HIGH, at which point  
device operation restarts. The next command cannot be  
executed until the recovery period (tc k a ) has elapsed.  
No Operation  
(CS, = LOW, RAS, CAS, WE = HIGH)  
This command has no effect on the device.  
Device Deselect Command  
(CS = HIGH)  
Sincethiscommanddiffersfromtheself-refreshcommand  
described above in that the refresh operation is not  
performed automatically internally, the refresh operation  
must be performed within the refresh period (tr e f ). Thus  
the maximum time that clock suspend mode can be held  
is just under the refresh cycle time.  
This command does not select the device for an object of  
operation. In other words, it performs no operation with  
respect to the device.  
Integrated Silicon Solution, Inc. — www.issi.com  
13  
Rev. C  
01/22/08