欢迎访问ic37.com |
会员登录 免费注册
发布采购

IC41SV4105-70T 参数 Datasheet PDF下载

IC41SV4105-70T图片预览
型号: IC41SV4105-70T
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM,]
分类和应用: 动态存储器
文件页数/大小: 17 页 / 237 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IC41SV4105-70T的Datasheet PDF文件第1页浏览型号IC41SV4105-70T的Datasheet PDF文件第2页浏览型号IC41SV4105-70T的Datasheet PDF文件第3页浏览型号IC41SV4105-70T的Datasheet PDF文件第5页浏览型号IC41SV4105-70T的Datasheet PDF文件第6页浏览型号IC41SV4105-70T的Datasheet PDF文件第7页浏览型号IC41SV4105-70T的Datasheet PDF文件第8页浏览型号IC41SV4105-70T的Datasheet PDF文件第9页  
IC41SV4105  
Functional Description  
Refresh Cycle  
The IC41SV4105 are CMOS DRAMs optimized for high-  
speed bandwidth, low power applications. During READ  
or WRITE cycles, each bit is uniquely addressed through  
the 10 address bits. These are entered 10 bits (A0-A9) at  
a time. The row address is latched by the Row Address  
Strobe (RAS). The column address is latched by the  
Column Address Strobe (CAS). RAS is used to latch the  
first ten bits and CAS is used the latter ten bits.  
To retain data, 1,024 refresh cycles are required in each  
16 ms period . There are two ways to refresh the memory:  
1. By clocking each of the 1,024 row addresses (A0  
through A9) with RAS at least once every 16 ms . Any  
read, write, read-modify-write or RAS-only cycle re-  
freshes the addressed row.  
2. Using a CAS-before-RAS refresh cycle. CAS-before-  
RAS refresh is activated by the falling edge of RAS,  
while holding CAS LOW. In CAS-before-RAS refresh  
cycle, an internal 10-bit counter provides the row ad-  
dresses and the external address inputs are ignored.  
Memory Cycle  
A memory cycle is initiated by bring RAS LOW and it is  
terminated by returning both RAS and CAS HIGH. To  
ensures proper device operation and data integrity any  
memory cycle, once initiated, must not be ended or aborted  
before the minimum tRAS time has expired. A new cycle  
must not be initiated until the minimum precharge time tRP,  
tCP has elapsed.  
CAS-before-RAS is a refresh-only mode and no data  
access or device selection is allowed. Thus, the output  
remains in the High-Z state during the cycle.  
Power-On  
Read Cycle  
After application of the VCC supply, an initial pause of  
200 µs is required followed by a minimum of eight initial-  
ization cycles (any combination of cycles containing a  
RAS signal).  
A read cycle is initiated by the falling edge of CAS or OE,  
whichever occurs last, while holding WE HIGH. The  
column address must be held for a minimum time specified  
by tAR. Data Out becomes valid only when tRAC, tAA, tCAC  
and tOE are all satisfied. As a result, the access time is  
dependent on the timing relationships between these  
parameters.  
During power-on, it is recommended that RAS track with  
VCC or be held at a valid VIH to avoid current surges.  
Write Cycle  
A write cycle is initiated by the falling edge of CAS and WE,  
whichever occurs last. The input data must be valid at or  
before the falling edge of CAS or WE, whichever occurs  
last.  
4
Integrated Circuit Solution Inc.  
DR032-0A 10/29/2001  
 复制成功!