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IC41SV4105-70T 参数 Datasheet PDF下载

IC41SV4105-70T图片预览
型号: IC41SV4105-70T
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM,]
分类和应用: 动态存储器
文件页数/大小: 17 页 / 237 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IC41SV4105  
AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)  
(Recommended Operating Conditions unless otherwise noted.)  
-50  
-70  
-100  
Symbol  
Parameter  
Min. Max. Min. Max. Min. Max. Units  
tACH  
Column-Address Setup Time to CAS  
15  
10  
15  
20  
15  
25  
ns  
ns  
Precharge during WRITE Cycle  
tOEH  
OE Hold Time from WE during  
READ-MODIFY-WRITE cycle(18)  
tDS  
Data-In Setup Time(15, 22)  
Data-In Hold Time(15, 22)  
0
8
0
0
ns  
ns  
ns  
ns  
tDH  
15  
20  
tRWC  
tRWD  
READ-MODIFY-WRITE Cycle Time  
125  
70  
185  
100  
240  
130  
RAS to WE Delay Time during  
READ-MODIFY-WRITE Cycle(14)  
tCWD  
tAWD  
tPC  
CAS to WE Delay Time(14, 20)  
34  
42  
20  
45  
60  
45  
55  
85  
60  
ns  
ns  
ns  
Column-Address to WE Delay Time(14)  
Fast Page Mode READ or WRITE  
Cycle Time  
tRASP  
tCPA  
Fast Page Mode RAS Pulse Width  
Access Time from CAS Precharge(15)  
Fast Page Mode READ WRITE  
50  
-
100K  
27  
70  
-
100K 100  
100K  
55  
ns  
ns  
ns  
40  
-
tPRWC  
47  
100  
120  
Cycle Time  
tOFF  
Output Buffer Turn-Off Delay from  
3
15  
3
15  
3
15  
ns  
(13,15,19, 24)  
CAS or RAS  
tCSR  
tCHR  
tORD  
CAS Setup Time (CBR REFRESH)(20, 25)  
5
10  
0
5
10  
0
5
10  
0
ns  
ns  
ns  
CAS Hold Time (CBR REFRESH)( 21, 25)  
OE Setup Time prior to RAS during  
HIDDEN REFRESH Cycle  
tREF  
tT  
Auto Refresh Period 1,024 Cycles  
Transition Time (Rise or Fall)(2, 3)  
3
16  
50  
3
16  
50  
3
16  
50  
ms  
ns  
AC TEST CONDITIONS  
Output load:  
One TTL Load and 100 pF  
Input timing reference levels:  
VIH = 1.4V, VIL = 0.6V  
Output timing reference levels: VOH = 1.4V, VOL = 0.6V  
8
Integrated Circuit Solution Inc.  
DR032-0A 10/29/2001