欢迎访问ic37.com |
会员登录 免费注册
发布采购

IC41C16256-50KIG 参数 Datasheet PDF下载

IC41C16256-50KIG图片预览
型号: IC41C16256-50KIG
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, LEAD FREE, SOJ-40]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 21 页 / 209 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IC41C16256-50KIG的Datasheet PDF文件第1页浏览型号IC41C16256-50KIG的Datasheet PDF文件第3页浏览型号IC41C16256-50KIG的Datasheet PDF文件第4页浏览型号IC41C16256-50KIG的Datasheet PDF文件第5页浏览型号IC41C16256-50KIG的Datasheet PDF文件第6页浏览型号IC41C16256-50KIG的Datasheet PDF文件第7页浏览型号IC41C16256-50KIG的Datasheet PDF文件第8页浏览型号IC41C16256-50KIG的Datasheet PDF文件第9页  
IC41C16256  
IC41LV16256  
256K x 16 (4-MBIT) DYNAMIC RAM  
WITH EDO PAGE MODE  
DESCRIPTION  
FEATURES  
The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-  
bit high-performance CMOS Dynamic Random Access Memo-  
ries. The IC41C16256 offer an accelerated cycle access  
called EDO Page Mode. EDO Page Mode allows 512 random  
accesses within a single row with access cycle time as short  
as 10 ns per 16-bit word. The Byte Write control, of upper and  
lower byte, makes the IC41C16256 ideal for use in  
16-, 32-bit wide data bus systems.  
• Extended Data-Out (EDO) Page Mode access cycle  
• TTL compatible inputs and outputs; tristate I/O  
• Refresh Interval: 512 cycles /8 ms  
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR),  
Hidden  
• Single power supply:  
5V ± 10% (IC41C16256)  
3.3V ± 10% (IC41LV16256)  
These features make the IC41C16256and IC41LV16256 ideally  
suited for high-bandwidth graphics, digital signal processing,  
high-performance computing systems, and peripheral  
applications.  
• Byte Write and Byte Read operation via two CAS  
• Industrail Temperature Range -40oC to 85oC  
Pb-free package is available  
The IC41C16256 is packaged in a 40-pin 400mil SOJ and  
400mil TSOP-2.  
KEY TIMING PARAMETERS  
Parameter  
-25(5V)  
-35  
35  
10  
18  
12  
60  
-50  
50  
14  
25  
20  
90  
-60  
60  
15  
30  
25  
Unit  
ns  
ns  
ns  
ns  
Max. RAS Access Time (tRAC)  
Max. CAS Access Time (tCAC)  
Max. Column Address Access Time (tAA)  
Min. EDO Page Mode Cycle Time (tPC)  
Min. Read/Write Cycle Time (tRC)  
25  
8
12  
10  
45  
110  
ns  
PIN CONFIGURATIONS  
40-Pin TSOP-2  
40-Pin SOJ  
PIN DESCRIPTIONS  
VCC  
I/O0  
I/O1  
I/O2  
I/O3  
VCC  
I/O4  
I/O5  
I/O6  
I/O7  
1
2
3
4
5
6
7
8
9
10  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
GND  
I/O15  
I/O14  
I/O13  
I/O12  
GND  
I/O11  
I/O10  
I/O9  
VCC  
I/O0  
I/O1  
I/O2  
I/O3  
VCC  
I/O4  
I/O5  
I/O6  
I/O7  
NC  
1
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
GND  
A0-A8  
Address Inputs  
2
I/O15  
I/O14  
I/O13  
I/O12  
GND  
I/O11  
I/O10  
I/O9  
I/O8  
NC  
I/O0-15 Data Inputs/Outputs  
3
4
WE  
Write Enable  
5
OE  
Output Enable  
6
7
RAS  
UCAS  
LCAS  
Vcc  
Row Address Strobe  
Upper Column Address Strobe  
Lower Column Address Strobe  
Power  
8
9
I/O8  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
NC  
NC  
WE  
RAS  
NC  
A0  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
NC  
NC  
LCAS  
UCAS  
OE  
LCAS  
UCAS  
OE  
WE  
RAS  
NC  
GND  
NC  
Ground  
A8  
No Connection  
A8  
A0  
A7  
A7  
A1  
A6  
A1  
A6  
A2  
A5  
A2  
A5  
A3  
A4  
A3  
A4  
VCC  
GND  
VCC  
GND  
 复制成功!