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IC41C8512-35KI 参数 Datasheet PDF下载

IC41C8512-35KI图片预览
型号: IC41C8512-35KI
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 512KX8, 35ns, CMOS, PDSO28, 0.400 INCH, SOJ-28]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 21 页 / 202 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IC41C8512-35KI的Datasheet PDF文件第13页浏览型号IC41C8512-35KI的Datasheet PDF文件第14页浏览型号IC41C8512-35KI的Datasheet PDF文件第15页浏览型号IC41C8512-35KI的Datasheet PDF文件第16页浏览型号IC41C8512-35KI的Datasheet PDF文件第17页浏览型号IC41C8512-35KI的Datasheet PDF文件第18页浏览型号IC41C8512-35KI的Datasheet PDF文件第20页浏览型号IC41C8512-35KI的Datasheet PDF文件第21页  
IC41C8512  
IC41LV8512  
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)  
t
RP  
t
RAS  
t
RP  
tRAS  
RAS  
t
CHR  
t
CHR  
t
RPC  
CP  
tRPC  
t
t
CSR  
tCSR  
CAS  
I/O  
Open  
HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW)  
t
RAS  
t
RAS  
t
RP  
RAS  
CAS  
t
CRP  
t
RCD  
t
RSH  
tCHR  
t
AR  
t
RAD  
t
RAL  
t
ASR  
t
RAH  
tCAH  
t
ASC  
ADDRESS  
Row  
Column  
t
AA  
t
RAC  
(2)  
OFF  
t
t
CAC  
t
CLZ  
Open  
Open  
Valid Data  
I/O  
OE  
t
OE  
tOD  
t
ORD  
Undefined  
Don’t Care  
Notes:  
1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.  
2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.  
Integrated Circuit Solution Inc.  
DR029-0A 09/28/2001  
19  
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