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AS7C33512PFS16A-150TQI 参数 Datasheet PDF下载

AS7C33512PFS16A-150TQI图片预览
型号: AS7C33512PFS16A-150TQI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX16, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 13 页 / 268 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C33512PFS16A  
AS7C33512PFS18A  
®
TQFP thermal resistance  
Description  
Conditions  
Symbol  
Typical  
40  
Units  
° C/ W  
° C/ W  
1-layer  
4-layer  
θ
Thermal resistance  
JA  
Test conditions follow standard test methods  
and procedures for measuring thermal  
impedance, per EIA/ JESD51  
(junction to ambient)1  
θ
22  
JA  
JC  
Thermal resistance  
θ
8
° C/ W  
(junction to top of case)1  
1 This parameter is sampled.  
DC electrical characteristics for 3.3V I/ O operation  
–166  
–150  
–133  
–100  
Parameter  
Symbol  
Test conditions  
Min Max Min Max Min Max Min Max Unit  
Input leakage  
current1  
| ILI|  
VDD = Max, VIN = GND to VDD  
2
2
2
2
2
2
2
2
µA  
µA  
Output leakage  
current  
OE V , VDD = Max,  
IH  
| ILO  
|
VOUT = GND to VDD  
2
Operating power  
supply current  
ICC  
CE0 = V , CE1 = V , CE2 = V ,  
IL  
IH  
IL  
475  
450  
425  
325 mA  
f = fMax, IOUT = 0 mA  
(Pipelined)  
2
ICC  
Operating power  
supply current  
CE0 = V , CE1 = V , CE2 = V ,  
IL  
IH  
IL  
325  
325  
300  
300 mA  
90  
(Flow-  
f = fMax, IOUT = 0 mA  
Through)  
ISB  
Deselected, f = fMax, ZZ V  
130  
30  
110  
30  
100  
30  
IL  
Deselected, f = 0, ZZ 0.2V  
all V 0.2V or VDD – 0.2V  
Standby power  
supply current  
ISB1  
30  
mA  
IN  
Deselected, f = f , ZZ  
V
– 0.2V  
Max  
DD  
ISB2  
30  
30  
30  
30  
All V V or V  
IN  
IL  
IH  
V
IOL = 8 mA, VDDQ = 3.465V  
IOH = –4 mA, VDDQ = 3.135V  
0.4  
0.4  
0.4  
0.4  
V
OL  
Output voltage  
V
2.4  
2.4  
2.4  
2.4  
OH  
1 LBO pin has an internal pull-up and input leakage = ±10 µA.  
2 I given with no output loading. I increases with faster cycle times and greater output loading.  
CC CC  
DC electrical characteristics for 2.5V I/ O operation  
–166  
–150  
–133  
–100  
Parameter  
Symbol  
| ILO  
Test conditions  
OE V , VDD = Max,  
Min Max Min Max Min Max Min Max Unit  
Output leakage  
current  
IH  
|
–1  
1
–1  
1
–1  
1
–1  
1
µA  
V
VOUT = GND to VDD  
V
IOL = 2 mA, VDDQ = 2.65V  
IOH = –2 mA, VDDQ = 2.35V  
IOL = 1mA, VDDQ = 2.65V  
IOH = –1 mA, VDDQ = 2.35V  
0.7  
0.7  
0.7  
0.7  
OL  
V
1.7  
1.7  
1.7  
1.7  
OH  
Output voltage  
V
0.4  
0.4  
0.4  
0.4  
OL  
V
V
2.0  
2.0  
2.0  
2.0  
OH  
5/ 9/ 03, v.1.8.1  
Alliance Semiconductor  
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