AS7C332MNTD18A
®
DC electrical characteristics for 3.3V I/O operation
Parameter
Input leakage current1
Output leakage current
Sym
|ILI|
Conditions
VDD = Max, OV < VIN < VDD
OE ≥ VIH, VDD = Max, OV < VOUT < VDDQ
Address and control pins
I/O pins
Min
-2
Max
Unit
µA
2
|ILO
|
-2
2
VDD+0.3
VDDQ+0.3
0.8
µA
2
Input high (logic 1) voltage
Input low (logic 0) voltage
VIH
V
V
2
Address and control pins
I/O pins
-0.3*
-0.5*
2.4
–
VIL
0.8
Output high voltage
Output low voltage
VOH
VOL
IOH = –4 mA, VDDQ = 3.135V
IOL = 8 mA, VDDQ = 3.465V
–
V
V
0.4
1 FT, LBO, and ZZ pins and the 165 BGA JTAG pins (TMS, TDI, and TCK) have an internal pull-up or pull-down, and input leakage = ±10 µA.
DC electrical characteristics for 2.5V I/O operation
Parameter
Input leakage current
Output leakage current
Sym
|ILI|
Conditions
VDD = Max, OV < VIN < VDD
OE ≥ VIH, VDD = Max, OV < VOUT < VDDQ
Address and control pins
I/O pins
Min
-2
Max
Unit
2
µA
µA
V
|ILO
|
-2
2
VDD+0.3
VDDQ+0.3
0.7
1.7
1.7
-0.3*
-0.3*
1.7
–
Input high (logic 1) voltage
Input low (logic 0) voltage
VIH
V
Address and control pins
I/O pins
V
VIL
0.7
V
Output high voltage
Output low voltage
VOH
VOL
IOH = –4 mA, VDDQ = 2.375V
IOL = 8 mA, VDDQ = 2.625V
–
V
0.7
V
*VIL min = -1.5 for pulse width less than 0.2 X tCYC
IDD operating conditions and maximum limits
Parameter
Sym
Test conditions
-200
-167
-133
Unit
Operating power supply
current (pipelined mode)
I
400
350
325
mA
1
CC
CE = V , CE = V , CE = V ,
0
IL
1
IH
2
IL
Operating power supply
I
f = f
I
= 0 mA
CC
max, out
2
current (flow-through
325
280
260
mA
(FT)
mode)
I
Deselected, f = f
ZZ < V
IL
120
70
110
70
100
70
SB
max,
Deselected, f = 0, ZZ < 0.2V
,
I
SB1
Standby power supply
current
all V ≤ 0.2V or ≥ V - 0.2V
IN
DD
mA
Deselected, f = f
,
Max
I
ZZ ≥ V - 0.2V,
60
60
60
SB2
DD
all V ≤ V or ≥ V
IN
IL
IH
1 I given with no output loading. I increases with faster cycle times and greater output loading.
CC
CC
4/26/04, V 1.2
Alliance Semiconductor
P. 8 of 22
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
