AS7C332MNTD18A
®
State diagram for NTD SRAM
Burst
Read
Burst
Read
Read
Burst
Read
Dsel
Dsel
Burst
Burst
Write
Burst
Write
Burst
Write
Write
Absolute maximum ratings
Parameter
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
Symbol
Min
Max
+4.6
Unit
V
VDD, VDDQ
VIN
–0.5
–0.5
–0.5
–
VDD + 0.5
VDDQ + 0.5
1.8
V
VIN
V
Pd
W
Short circuit output current
IOUT
–
20
mA
oC
oC
oC
Storage temperature (TQFP)
Storage temperature (BGA)
Tstg (TQFP)
Tstg (BGA)
Tbias
–65
–65
–65
+150
+125
Temperature under bias
+135
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
VDD
Min
3.135
3.135
0
Nominal
Max
3.465
3.465
0
Unit
V
3.3
3.3
0
VDDQ
Vss
V
V
Recommended operating conditions at 2.5V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
Min
3.135
2.375
0
Nominal
Max
3.465
2.625
0
Unit
V
VDD
VDDQ
Vss
3.3
2.5
0
V
V
4/26/04, V 1.2
Alliance Semiconductor
P. 7 of 22
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
