AS7C33256NTD32A
AS7C33256NTD36A
®
Notes
1
For test conditions, see AC Test Conditions, Figures A, B, C.
This parameter measured with output load condition in Figure C
This parameter is sampled and not 100% tested.
7
Transitions are measured ±500 mV from steady state voltage. Output
loading specified with CL = 5 pF as in Figure C.
2
3
4
8
9
tCH measured as high above VIH, and tCL measured as low below VIL
This is a synchronous device. All addresses must meet the specified
setup and hold times for all rising edges of CLK. All other synchronous
inputs must meet the setup and hold times with stable logic levels for all
rising edges of CLK when chip is enabled.
t
HZOE is less than tLZOE; and tHZC is less than tLZC at any given temper-
ature and voltage.
5
6
tHZCN is a‘no load’ parameter to indicate exactly when SRAM outputs
have stopped driving.
ICC given with no output loading. ICC increases with faster cycle times
and greater output loading.
11/30/04, v. 2.1
Alliance Semiconductor
P. 16 of 19
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
