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AS7C251MNTD18A-225TQI 参数 Datasheet PDF下载

AS7C251MNTD18A-225TQI图片预览
型号: AS7C251MNTD18A-225TQI
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 1MX18, 6.9ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 19 页 / 366 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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DC electrical characteristics for 2.5V I/O operation
250
Parameter
Output leakage
current
Operating power
supply current
Sym
Test conditions
V
DD
= Max, V
in
= GND to V
DD
OE
V
IH,
V
DD
= Max,
V
out
= GND to V
DD
CE = V
IL
, CE = V
IH
, CE = V
IL
,
f
=
f
max,
I
out
= 0 mA
Deselected,
f
=
f
max
Deselected,
f
=
0,
all V
IN
0.2V
or
(V
DD
, V
DDQ
) - 0.2V
Deselected, f = f
Max
,
ZZ
(V
DD
, V
DDQ
) - 0.2V,
all V
IN
V
IL
or
V
IH
I
OL
= 2 mA, V
DDQ
= 2.65V
I
OH
= –2 mA, V
DDQ
= 2.35V
Min
Max
Min
225
Max
200
Min
Max
166
Min
Max
Unit
µA
µA
mA
Input leakage current
1
| I
LI
|
| I
LO
|
I
CC
I
SB
Standby power supply
current
2
I
SB1
-1
2
1
425
110
70
-1
2
1
400
110
70
-1
2
1
370
110
70
-1
2
1
340
90
70
mA
1.7
30
0.7
1.7
30
0.7
1.7
30
0.7
1.7
30
0.7
V
V
I
SB2
Output voltage
V
OL
V
OH
1 I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
2 LBO pin has an internal pull-up, and input leakage = ±10 mA.
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