IS66WVE4M16ALL
Advanced Information
Functional Description
In general, this device is high-density alternatives to SRAM and Pseudo SRAM products popular
in low-power, portable applications.
The 64Mb device contains a 67,108,864-bit DRAM core organized as 4,194,304 addresses by
16 bits. This device include the industry-standard, asynchronous memory interface found on
other low-power SRAM or PSRAM offerings
Page mode access is also supported as a bandwidth-enhancing extension to the asynchronous
read protocol.
Power-Up Initialization
PSRAM products include an on-chip voltage sensor that is used to launch the power-up
initialization process. Initialization will load the CR with its default settings (see Table 3).
VDD and VDDQ must be applied simultaneously. When they reach a stable level above
1.8V, the device will require 150μs to complete its self-initialization process ( see Figure 1).
During the initialization period, CE# should remain HIGH. When initialization is complete,
the device is ready for normal operation.
Figure 1: Power-Up Initialization Timing
VDD=1.8V
tPU > 150us
VDD
VDDQ
Device Initialization
Device ready for
normal operation
Rev.00C | March 2010
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ISSI [ INTEGRATED SILICON SOLUTION, INC ]
