INA5002AP1
For low frequency power amplify
Silicon PNP Epitaxial
TYPICIAL CHARACTERISTICS
COLLECTOR DISSIPATION
VS. AMBIENT TEMPERATURE
600
COLLECTOR DISSIPATION Pc(mW)
500
400
300
200
100
0
0
50
100
150
200
AMBIENT TEMPERATURE Ta(℃)
1000
DC FORWARD CURRENT GAIN hFE
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
VCE=-2V
Ta=150℃
100
Ta=25℃
Ta=-50℃
10
-0.001
-0.01
-0.1
-1
-10
COLLECTOR CURRENT IC(A)
COMMON EMITTER TRANSFER
-1
VCE=-2V
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT IC(A)
-0.8
Ta=150℃
-0.6
Ta=25℃
Ta=-50℃
-0.4
-0.2
-0
-0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
BASE TO EMITTER VOLTAGE VBE(V)
-500
-600
COMMON EMITTER OUTPUT
Pcmax=500mW
IB=-3.0mA
IB=-2.5mA
Ta=25℃
-400
-300
-200
-100
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
IB=0mA
-0
-0
-1
-2
-3
-4
-5
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COLLECTOR TO EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
BASE TO EMITTER SATURATION
VOLTAGE VBE(sat)(V)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
-1000
IC/IB=10
BASE TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
-1.5
IC/IB=10
-1.2
Ta=25℃
-0.9
-0.6
-0.3
-0
-0.001
Ta=150℃
Ta=-50℃
Ta=150℃
-100
Ta=25℃
Ta=-50℃
-10
-0.001
-0.01
-0.1
-1
-10
COLLECTOR CURRENT IC(A)
-0.01
-0.1
-1
-10
COLLECTOR CURRENT IC(A)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
