INA5002AP1
For low frequency power amplify
Silicon PNP Epitaxial
DESCRIPTION
INA5002AP1 is a silicon PNP epitaxial transistor designed for relay
drive or Power supply application.
OUTLINE DRAWING
4.6 MAX
1.6
UNIT：½½
1.5
FEATURE
●Small package for easy mounting.
●High voltage V
CEO
=-60V
●Low VCE(sat) VCE（sat）=-0.6V max（@I
C
=-3A/ I
B
=-300mA）
●High collector dissipation P
C
=500mW
0.8 MIN
●High collector current I
C
=-3A
E
C
0.53
MAX
B
4.2 MAX
2.5
0.4
0.48 MAX
1.5
APPLICATION
DC½DC converter, Relay drive, Motor drive
etc
3.0
マーキング
MARKING
TERMINAL CONNECTOR
電極接続
Ｅ:
E：EMITTER
エミッタ
Ｃ:
C：COLLECTOR
コレクタ
Ｂ: ベース
B：BASE
JEITA:SC-62
EIAJ : SC-62
JEDEC:SOT-89
JEDEC :
JEDEC：―
MAXIMUM RATING（Ta=25℃）
SYMBOL
V
CBO
V
EBO
V
CEO
I
I
C
CM
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
-80
-6
-60
-3
-6
500
＋150
-55½＋150
UNIT
V
V
V
A
mW
℃
℃
MARKING
Type Name
B A
W
LOT №
h
FE
ITEM
LIMITS
MIN
-80
-6
-60
-
-
100
-
-
-
TYP
-
-
-
-
-
-
-
200
25
MAX
-
-
-
-1.0
-1.0
300
-0.5
-
-
P
C
T
j
T
stg
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
½
ＦＥ
V
CE(sat)
f
T
Cob
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
TEST CONDITIONS
I
C
=-100μA，I
E
=0mA
I
E
=-100μA，I
C
=0mA
I
C
=-1mA，R
BE
=∞
V
CB
=-60V，I
E
=0mA
V
EB
=-4V，I
C
=0mA
V
CE
=-2V，I
C
=-0.5A
I
C
=-3A，I
B
=-300mA
V
CE
=-5V，I
E
=100mA
V
CB
=-10V，I
E
=0mA，f=1MHz
UNIT
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
