Si4410DYPbF
0.20
R
DS(on)
, Drain-to-Source On Resistance
(Ω)
R
DS(on)
, Drain-to-Source On Resistance
(Ω)
0.03
0.16
0.02
0.12
I
D
= 10A
0.01
0.08
V
GS
= 10V
V
GS
= 4.5V
0.04
0.00
0
10
20
30
40
50
A
0.00
3
4
5
6
7
8
9
10
A
I
D
, Drain Current (A)
V
GS
, Gate-to-Source Voltage (V)
Fig 12.
Typical On-Resistance Vs. Drain
Current
Fig 13.
Typical On-Resistance Vs. Gate
Voltage
3.0
1000
E
AS
, Single Pulse Avalanche Energy (mJ)
TOP
800
V
GS(th)
, Variance ( V)
BOTTOM
ID
4.5A
8.0A
10A
2.5
600
I
D
=250µA
2.0
400
200
1.5
-60
A
-40
-20
0
20
40
60
80
100 120 140 160
0
25
50
75
100
125
150
T
J
, Junction Temperature (°C)
Starting T
J
, Junction Temperature (
°
C)
Fig 14.
Typical Threshold Voltage Vs.Temperature
Fig 15.
Maximum Avalanche Energy
Vs. Drain Current
6
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