PD - 95168
Si4410DYPbF
l
l
l
l
l
l
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
Lead-Free
HEXFET
®
Power MOSFET
A
A
D
D
D
D
S
S
S
G
1
8
7
2
V
DSS
= 30V
3
6
4
5
R
DS(on)
= 0.0135Ω
Description
This N-channel HEXFET
®
Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low on-
resistance and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in typical board
mount applications.
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
dv/dt
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
30
±10
±8.0
±50
2.5
1.6
0.02
5.0
400
± 20
-55 to + 150
Units
V
A
W
W/°C
V/ns
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
www.irf.com
1
09/22/04
IRF [ INTERNATIONAL RECTIFIER ]
