IRLML6402PbF-1
1000
800
600
400
200
0
10
8
I
D
= -3.7A
V
C
= 0V,
f = 1 MHZ
GS
= C + C
,
C
ds
SHORTED
iss
gs
gd
V
=-10V
DS
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
6
4
Coss
Crss
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
3
6
9
12
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
100us
1ms
°
T = 150 C
J
1
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.0
0.1
0.1
0.1
0.2
1
10
100
0.4
0.6
0.8
1.2
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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November 25, 2013
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