IRLML2803
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
30
1.0
0.87
Typ.
0.029
3.3
0.48
1.1
3.9
4.0
9.0
1.7
85
34
15
Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
0.25
V
GS
= 10V, I
D
= 0.91A
Ω
0.40
V
GS
= 4.5V, I
D
= 0.46A
V
V
DS
= V
GS
, I
D
= 250µA
S
V
DS
= 10V, I
D
= 0.46A
1.0
V
DS
= 24V, V
GS
= 0V
µA
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
5.0
I
D
= 0.91A
0.72
nC V
DS
= 24V
1.7
V
GS
= 10V, See Fig. 6 and 9
V
DD
= 15V
I
D
= 0.91A
ns
R
G
= 6.2Ω
R
D
= 16Ω, See Fig. 10
V
GS
= 0V
pF
V
DS
= 25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
26
22
0.54
7.3
1.2
40
32
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 0.91A, V
GS
= 0V
T
J
= 25°C, I
F
= 0.91A
di/dt = 100A/µs
D
G
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
5sec.
I
SD
≤
0.91A, di/dt
≤
120A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
IRF [ INTERNATIONAL RECTIFIER ]
