PD - 91258D
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
IRLML2803
V
DSS
= 30V
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
D
G
S
R
DS(on)
= 0.25Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro3
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
1.2
0.93
7.3
540
4.3
± 20
5.0
-55 to + 150
Units
A
mW
mW/°C
V
V/ns
°C
Thermal Resistance
R
θJA
Maximum Junction-to-Ambient
Parameter
Typ.
Max.
230
Units
°C/W
4/28/03
IRF [ INTERNATIONAL RECTIFIER ]
