IRL520N
15
12
9
800
I
= 6.0A
D
V
C
C
C
= 0V ,
f = 1M Hz
G S
iss
= C
+ C
+ C
,
C
SHORTE D
V
V
V
= 80V
= 50V
= 20V
gs
gd
ds
D S
D S
D S
= C
= C
rss
oss
gd
ds
gd
600
400
200
0
C
iss
6
C
C
oss
rss
3
FOR TE ST CIRCUIT
S EE FIGURE 13
0
A
A
0
5
10
15
20
25
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPE RATION IN THIS AREA LIM ITE D
BY R DS(on)
10µs
T
= 175°C
J
100µs
T
= 25°C
J
1m s
10 m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
S ingle Pulse
G S
A
0.1
0.1
A
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
INFINEON [ Infineon ]
