IRL520N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.18
––– ––– 0.22
––– ––– 0.26
VGS = 10V, ID = 6.0A
VGS = 5.0V, ID = 6.0A
VGS = 4.0V, ID = 5.0A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 6.0A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
1.0
3.1
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 20
––– ––– 4.6
––– ––– 10
VDS = 100V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 16V
VGS = -16V
ID = 6.0A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 5.0V, See Fig. 6 and 13
–––
–––
–––
–––
4.0 –––
35 –––
23 –––
22 –––
VDD = 50V
ID = 6.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 11Ω, VGS = 5.0V
RD = 8.2Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
4.5
–––
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
––– 440 –––
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
–––
–––
97 –––
50 –––
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
10
35
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 110 160
––– 410 620
V
TJ = 25°C, IS = 6.0A, VGS = 0V
ns
TJ = 25°C, IF =6.0A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 6.0A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS
,
max. junction temperature. ( See fig. 11 )
TJ ≤ 175°C
Starting TJ = 25°C, L = 4.7mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 6.0A. (See Figure 12)
INFINEON [ Infineon ]
