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IRKL56-08AS90 参数 Datasheet PDF下载

IRKL56-08AS90图片预览
型号: IRKL56-08AS90
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管/二极管和晶闸管/晶闸管ADD -A - pakTM GEN V电源模块 [THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules]
分类和应用: 电源电路二极管
文件页数/大小: 10 页 / 234 K
品牌: INFINEON [ Infineon ]
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IRK.41, .56 Series  
Bulletin I27131 rev. G 10/02  
Triggering  
Parameters  
IRK.41  
10  
IRK.56  
10  
Units  
Conditions  
PGM Max.peakgatepower  
W
A
PG(AV) Max.averagegatepower  
2.5  
2.5  
IGM  
Max.peakgatecurrent  
2.5  
2.5  
-VGM Max.peaknegative  
gate voltage  
10  
4.0  
2.5  
1.7  
TJ =-40°C  
TJ =25°C  
TJ =125°C  
V
VGT Max.gatevoltage  
required to trigger  
Anodesupply=6V  
resistive load  
270  
150  
80  
TJ =-40°C  
TJ =25°C  
IGT  
Max.gatecurrent  
required to trigger  
Anodesupply=6V  
resistive load  
mA  
TJ =125°C  
TJ =125oC,  
ratedVDRMapplied  
VGD Max.gatevoltage  
thatwillnottrigger  
0.25  
6
V
TJ =125oC,  
ratedVDRMapplied  
IGD  
Max.gatecurrent  
thatwillnottrigger  
mA  
Blocking  
Parameters  
IRK.41  
IRK.56  
Units  
mA  
Conditions  
IRRM Max. peak reverse and  
IDRM off-state leakage current  
at VRRM, VDRM  
15  
TJ = 125 oC, gate open circuit  
2500 (1 min)  
3500 (1 sec)  
50 Hz, circuit to base, all terminals  
shorted  
VINS RMS isolation voltage  
V
dv/dt Max. critical rate of rise  
of off-state voltage (5)  
TJ = 125oC, linear to 0.67 VDRM  
gate open circuit  
,
500  
V/µs  
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.  
Thermal and Mechanical Specifications  
Parameters  
IRK.41  
IRK.56  
Units  
°C  
Conditions  
TJ  
T
Junction operating  
temperature range  
Storage temp. range  
- 40 to 125  
-40to125  
stg  
RthJC Max. internalthermal  
resistance, junction  
tocase  
0.23  
0.20  
Permodule, DCoperation  
K/W  
Nm  
RthCS Typicalthermalresistance  
case to heatsink  
Mounting surface flat, smooth and greased  
0.1  
T
Mounting torque ± 10%  
to heatsink  
A mounting compound is recommended  
and the torque should be rechecked after a  
period of 3 hours to allow for the spread of  
the compound  
5
3
busbar  
wt  
Approximateweight  
110(4)  
gr(oz)  
Casestyle  
TO-240AA  
JEDEC  
R Conduction (per Junction)  
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)  
Sine half wave conduction  
Rect. wave conduction  
Devices  
Units  
°C/W  
180o  
0.11  
0.09  
120o  
0.13  
0.11  
90o  
0.17  
0.13  
60o  
0.23  
0.18  
30o  
0.34  
0.27  
180o  
0.09  
0.07  
120o  
0.14  
0.11  
90o  
0.18  
0.14  
60o  
0.23  
0.19  
30o  
0.34  
0.28  
IRK.41  
IRK.56  
www.irf.com  
3
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