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IRKL56-08AS90 参数 Datasheet PDF下载

IRKL56-08AS90图片预览
型号: IRKL56-08AS90
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管/二极管和晶闸管/晶闸管ADD -A - pakTM GEN V电源模块 [THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules]
分类和应用: 电源电路二极管
文件页数/大小: 10 页 / 234 K
品牌: INFINEON [ Infineon ]
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IRK.41, .56 Series  
Bulletin I27131 rev. G 10/02  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
VRRM , maximum  
repetitive  
peak reverse voltage peak reverse voltage  
VRSM , maximum  
non-repetitive  
VDRM , max. repetitive  
peak off-state voltage,  
gate open circuit  
IRRM  
IDRM  
125°C  
Voltage  
Type number  
Code  
-
V
V
V
mA  
04  
06  
08  
400  
500  
400  
600  
700  
600  
800  
900  
800  
IRK.41/ .56  
10  
12  
14  
16  
1000  
1200  
1400  
1600  
1100  
1300  
1500  
1700  
1000  
1200  
1400  
1600  
15  
On-state Conduction  
Parameters  
IRK.41  
IRK.56  
Units  
Conditions  
IT(AV) Max.average on-state  
current (Thyristors)  
45  
45  
60  
60  
180o conduction, half sine wave,  
TC=85oC  
IF(AV) Maximumaverage  
forward current (Diodes)  
IO(RMS Max.continuousRMS  
)
on-state current.  
As AC switch  
100  
135  
or  
I(RMS)  
I(RMS)  
A
ITSM  
or  
Max.peak,onecycle  
non-repetitive on-state  
or forward current  
850  
890  
1310  
1370  
1100  
1150  
1450  
1520  
8.56  
7.82  
6.05  
5.53  
10.05  
9.60  
85.6  
0.85  
0.88  
3.53  
3.41  
t=10ms No voltage  
Sinusoidal  
half wave,  
InitialTJ =TJ max.  
t=8.3ms reapplied  
t=10ms 100%VRRM  
t=8.3ms reapplied  
t=10ms TJ =25oC,  
IFSM  
715  
750  
940  
985  
t=8.3ms no voltage reapplied  
t=10ms No voltage  
I2t  
Max.I2tforfusing  
3.61  
3.30  
2.56  
2.33  
4.42  
4.03  
36.1  
0.88  
0.91  
5.90  
5.74  
t=8.3ms reapplied  
InitialTJ =TJmax.  
t=10ms 100%VRRM  
KA2s  
t=8.3ms reapplied  
t=10ms TJ =25oC,  
t=8.3ms no voltage reapplied  
t=0.1 to 10ms, no voltage reapplied  
I2t  
Max.I2tforfusing (1)  
KA2s  
VT(TO) Max.valueofthreshold  
voltage (2)  
Low level (3)  
TJ = TJ max  
High level (4)  
V
r
Max.valueofon-state  
Low level (3)  
TJ = TJ max  
High level (4)  
t
mΩ  
slope resistance (2)  
Max.peakon-stateor  
VTM  
VFM  
ITM=π xIT(AV)  
TJ = 25°C  
1.81  
1.54  
V
forward voltage  
IFM=π xIF(AV)  
di/dt Max.non-repetitive rate  
of rise of turned on  
TJ = 25oC, from 0.67 VDRM  
TM =π x IT(AV), I = 500mA,  
,
I
g
150  
A/µs  
mA  
current  
t < 0.5 µs, t > 6 µs  
r p  
TJ =25oC,anodesupply=6V,  
IH  
IL  
Max. holding current  
Max. latchingcurrent  
200  
400  
resistive load, gate open circuit  
TJ =25oC, anodesupply=6V,resistiveload  
2
(1) I2t for time tx = I2t x tx  
(4) I > π x IAV  
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)  
)
(3) 16.7% x π x IAV < I < π x IAV  
www.irf.com  
2
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