IRFP064N
20
16
12
8
8000
I
= 59A
D
V
C
C
C
= 0V,
f = 1MHz
GS
iss
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
V
V
V
= 44V
= 28V
= 11V
DS
DS
DS
7000
6000
5000
4000
3000
2000
1000
0
rss
oss
gd
C
C
iss
o s s
C
rs s
4
FOR TES T CIRCUIT
SEE FIGURE 13
0
A
A
0
30
60
90
120
150
180
1
10
100
Q G , Total Gate Charge (nC)
VD S , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0 0
1000
100
10
OPERATION IN THIS AREA LIM ITE D
BY R
D S(o n)
10µs
1 00µs
T
= 175°C
J
1 0 0
1m s
T
= 25°C
J
10m s
T
T
= 25°C
= 175°C
C
J
S ingle Pulse
V
= 0V
G S
1
1 0
A
A
1
10
100
0. 6
1. 0
1. 4
1. 8
2. 2
2. 6
3. 0
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
INFINEON [ Infineon ]
