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IRFP064N 参数 Datasheet PDF下载

IRFP064N图片预览
型号: IRFP064N
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET ( VDSS = 55V , RDS(ON) = 0.008ohm ,ID = 110A ) [Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)]
分类和应用:
文件页数/大小: 8 页 / 109 K
品牌: INFINEON [ Infineon ]
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PD - 9.1383A  
IRFP064N  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 55V  
RDS(on) = 0.008Ω  
ID = 110A†  
G
l Fully Avalanche Rated  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This benefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor, providesthedesignerwithanextremelyefficient  
and reliable device for use in a wide variety of applications.  
The TO-247 package is preferred for commercial-industrial  
applications where higher power levels preclude the use of  
TO-220 devices. The TO-247 is similar but superior to the  
earlier TO-218 package because of its isolated mounting  
hole.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
110†  
80†  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current ꢀ  
A
390  
PD @TC = 25°C  
Power Dissipation  
200  
W
W/°C  
V
Linear Derating Factor  
1.3  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Current  
480  
mJ  
59  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
20  
mJ  
5.0  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.75  
–––  
40  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
8/25/97