IRF9Z24N
20
16
12
8
700
I
= -7.2A
D
V
C
C
C
= 0V ,
f = 1MH z
GS
iss
= C
= C
= C
+ C
+ C
,
C
ds
SHORTED
gs
g d
ds
g d
V
V
= -44V
= -28V
600
500
400
300
200
100
0
rss
oss
DS
DS
gd
C
C
is s
o s s
C
rs s
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
5
10
15
20
25
1
10
100
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1 0 0
1 0
1
100
10
1
OPERATION IN THIS AREA LIM ITED
BY R
D S(o n)
1 0µs
T
= 150°C
J
T
= 25°C
J
100µs
1m s
T
T
= 25°C
= 175°C
Single Pulse
C
J
V
= 0V
GS
10m s
0. 1
A
A
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
1. 6
1. 8
1
10
100
-V
, Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
INFINEON [ Infineon ]
