IRF9Z24N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-55 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.175
Ω
V
S
VGS = -10V, ID = -7.2A
VDS = VGS, ID = -250µA
VDS = -25V, ID = -7.2A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
-2.0 ––– -4.0
2.5 ––– –––
Forward Transconductance
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 19
––– ––– 5.1
––– ––– 10
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -7.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -44V
VGS = -10V, See Fig. 6 and 13
–––
–––
–––
–––
13 –––
55 –––
23 –––
37 –––
VDD = -28V
ID = -7.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24Ω
RD = 3.7Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
4.5
7.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 350 –––
––– 170 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
–––
92 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-12
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– -48
––– ––– -1.6
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
V
TJ = 25°C, IS = -7.2A, VGS = 0V
––– 47
––– 84 130
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
71
ns
TJ = 25°C, IF = -7.2A
Qrr
ton
µC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ -7.2A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 3.7mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -7.2A. (See Figure 12)
INFINEON [ Infineon ]
