IRF7842PbF
RDS(on), Drain-to -Source On Resistance ( mΩ)
16
200
EAS, Single Pulse Avalanche Energy (mJ)
ID = 18A
12
160
ID
TOP
6.7A
7.5A
BOTTOM
14A
120
8
T J = 125°C
4
80
TJ = 25°C
0
2.0
4.0
6.0
8.0
10.0
40
0
25
50
75
100
125
150
VGS, Gate-to-Source Voltage (V)
Starting T J, Junction Temperature (°C)
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 13c.
Maximum Avalanche Energy
Vs. Drain Current
L
D
V
DS
15V
VDS
L
DRIVER
+
V
DD
-
RG
V
GS
20V
D.U.T
IAS
tp
+
V
- DD
A
D.U.T
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
0.01
Ω
Fig 13a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
Fig 14a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
I
AS
t
d(on)
t
r
t
d(off)
t
f
Fig 13b.
Unclamped Inductive Waveforms
Fig 14b.
Switching Time Waveforms
6
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