IRF7842PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
40
–––
–––
–––
1.35
–––
–––
–––
–––
–––
81
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.037
4.0
4.7
–––
- 5.6
–––
–––
–––
–––
–––
33
9.6
2.8
10
10.6
12.8
18
1.3
14
12
21
5.0
4500
680
310
–––
–––
5.0
5.9
2.25
–––
1.0
150
100
-100
–––
50
–––
–––
–––
–––
–––
–––
TBD
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 20V
ns
nC
Ω
nC
V
DS
= 20V
V
GS
= 4.5V
I
D
= 14A
S
nA
V
mV/°C
µA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 17A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
e
= 14A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 32V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 20V, I
D
= 14A
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 4.5V
I
D
= 14A
Clamped Inductive Load
e
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Typ.
–––
–––
Max.
50
14
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
99
11
3.1
A
140
1.0
150
17
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
T
J
= 25°C, I
F
= 14A, V
DD
= 20V
di/dt = 100A/µs
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2
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