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IRF7842PBF 参数 Datasheet PDF下载

IRF7842PBF图片预览
型号: IRF7842PBF
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET功率MOSFET [HEXFET Power MOSFET]
分类和应用: 晶体小信号场效应晶体管PC
文件页数/大小: 9 页 / 163 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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IRF7842PbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 18A
VGS = 10V
100.0
1.5
T J = 150°C
10.0
T J = 25°C
1.0
1.0
VDS = 25V
60µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3