IRF7832PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
10
ID = 20A
8
EAS , Single Pulse Avalanche Energy (mJ)
600
500
400
ID
TOP
7.0A
13A
BOTTOM 16A
6
TJ = 125°C
300
4
TJ = 25°C
200
2
100
0
2
3
4
5
6
7
8
9
10
V GS, Gate -to -Source Voltage (V)
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy
vs. Drain Current
Current Regulator
Same Type as D.U.T.
V
(BR)DSS
15V
tp
12V
.2µF
DRIVER
50KΩ
.3µF
VDS
L
D.U.T.
RG
20V
VGS
+
V
-
DS
D.U.T
IAS
tp
+
- VDD
A
V
GS
0.01
Ω
I
AS
3mA
Fig 14.
Unclamped Inductive Test Circuit
and Waveform
L
D
V
DS
I
G
I
D
Current Sampling Resistors
Fig 15.
Gate Charge Test Circuit
+
V
DD
-
90%
V
DS
D.U.T
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 16.
Switching Time Test Circuit
Fig 17.
Switching Time Waveforms
6
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