IRF7832PbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C SHORTED
gs gd ds
Crss = C
gd
Coss = Cds + Cgd
6
ID= 16A
VDS= 24V
VDS= 15V
VGS, Gate-to-Source Voltage (V)
100
5
4
3
2
1
0
C, Capacitance(pF)
10000
Ciss
1000
Coss
Crss
100
1
10
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (
Α
)
100
T J = 150°C
10
T J = 25°C
1
ID, Drain-to-Source Current (A)
100
100µsec
10
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
VDS, Drain-to-Source Voltage (V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
VGS = 0V
1.2
1.4
1.6
1
10msec
100
VSD , Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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