IRF7832PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.39
–––
–––
–––
–––
–––
77
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.023
3.1
3.7
–––
5.7
–––
–––
–––
–––
–––
34
8.6
2.9
12
10.5
14.9
23
1.2
12
6.7
21
13
4310
990
450
–––
–––
4.0
4.8
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 16A
2.32
V V
DS
= V
GS
, I
D
= 250µA
––– mV/°C
1.0
150
100
-100
–––
51
–––
–––
–––
–––
–––
–––
2.4
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
nC
Ω
µA
nA
S
e
e
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 16A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 16A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
nC
ns
I
D
= 16A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
260
16
Units
mJ
A
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
41
39
3.1
A
160
1.0
62
59
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
DD
= 10V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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