IRF7424
6000
12
10
8
V
= 0V,
f = 1MHz
C
I =
-11A
D
GS
V
V
=-24V
=-15V
DS
DS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
C
= C
gd
rss
5000
4000
3000
2000
1000
0
C
= C + C
ds
oss
C
iss
6
4
C
C
oss
2
rss
0
1
10
100
0
20
40
60
80
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
°
T = 25 C
10ms
A
J
°
T = 150 C
V
= 0 V
GS
Single Pulse
0.1
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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