PD- 94024A
IRF7424
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
VDSS
-30V
RDS(on) max (mΩ)
13.5@VGS = -10V
22@VGS = -4.5V
ID
-11A
-8.8A
l Available in Tape & Reel
A
1
2
8
D
S
S
Description
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
7
D
3
4
6
S
D
5
G
D
SO-8
Top View
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
-30
V
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-11
-9.3
A
-47
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
2.5
W
1.6
Linear Derating Factor
20
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
RθJA
www.irf.com
1
3/29/01
INFINEON [ Infineon ]
