IRF7424
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.019 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 13.5
––– ––– 22
VGS = -10V, ID = -11A
VGS = -4.5V, ID = -8.8A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -11A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
gfs
Gate Threshold Voltage
-1.0 ––– -2.5
17 ––– –––
––– ––– -15
––– ––– -25
––– ––– -100
––– ––– 100
––– 75 110
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
ID = -11A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 14
––– 12
21
18
nC VDS = -15V
VGS = -10V
––– 15 –––
––– 23 –––
––– 150 –––
––– 76 –––
––– 4030 –––
––– 580 –––
––– 410 –––
VDD = -15V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = -10V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -25V
ƒ = 1.0kHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
–––
–––
-2.5
-47
–––
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -2.5A, VGS = 0V
––– 40
––– 47
60
71
ns
TJ = 25°C, IF = -2.5A
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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