IRF7413QPbF
3200
2800
2400
2000
1600
1200
800
400
0
1
10
100
C
oss
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
iss
C
oss
= C
ds
+ C
gd
20
I
D
= 7.3A
V
DS
= 24V
V
DS
= 15V
16
C, Capacitance (pF)
12
8
C
rss
4
A
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 9
40
50
60
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150°C
10
I
D
, Drain Current (A)
T
J
= 25°C
100
100us
10
1ms
1
0.4
1.2
2.0
2.8
V
GS
= 0V
A
3.6
1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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