IRF7413QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min
30
–––
–––
–––
1.0
10
–––
–––
–––
–––
–––
–––
–––
1.2
–––
–––
–––
–––
–––
–––
–––
Typ
–––
0.034
–––
–––
–––
–––
–––
–––
–––
–––
52
6.1
16
–––
8.6
50
52
46
1800
680
240
Max
–––
–––
0.011
0.018
3.0
–––
12
25
-100
100
79
9.2
23
3.7
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 7.3A
V
GS
= 4.5V, I
D
= 3.7A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 10V, I
D
= 3.7A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
= 7.3A
V
DS
= 24V
V
GS
= 10V, See Fig. 6 and 9
f
f
nC
f
ns
pF
V
DD
= 15V
I
D
= 7.3A
R
G
= 6.2
Ω
R
G
= 2.0Ω, See Fig. 10
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
f
Source-Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
74
200
Max.
3.1
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 7.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.3A
di/dt = 100A/µs
Ã
58
1.0
110
300
V
ns
nC
e
e
Notes:
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L =9.8mH
max. junction temperature. ( See fig. 11 )
I
SD
≤
7.3A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
R
G
= 25Ω, I
AS
=7.3A. (See Figure 12)
Surface mounted on FR-4 board
R
θ
is measured at T
J
approximately 90°C
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