PD - 96112A
IRF7413QPbF
l
l
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HEXFET
®
Power MOSFET
A
A
D
D
D
D
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S
S
S
G
1
2
3
4
8
7
V
DSS
= 30V
R
DS(on)
= 0.011Ω
6
5
Top View
Description
These HEXFET
®
Power MOSFET's in SO-8 package
utilize the lastest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET's
are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape &
Reel.
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
E
AS
dv/dt
T
J,
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energency
Peak Diode Recovery dv/dt
Max
30
± 20
13
9.2
58
2.5
0.02
260
5.0
-55 to +150
Units
V
A
W
mW/°C
mJ
V/ns
°C
c
e
d
Junction and Storage Temperature Range
Thermal Resistance Ratings
Symbol
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
h
gh
Parameter
Typ
–––
–––
Max
20
50
Units
°C/W
www.irf.com
1
08/09/10
IRF [ INTERNATIONAL RECTIFIER ]
