IRF7343PbF
2.5
N-Channel
2.0
R
DS (on)
, Drain-to-Source On Resistance
(Ω)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 4.7A
0.120
0.100
1.5
0.080
1.0
VGS = 4.5V
0.5
0.060
VGS = 10V
0.040
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
0
10
20
30
40
I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
0.12
200
R
DS(on)
, Drain-to-Source On Resistance
( Ω )
E
AS
, Single Pulse Avalanche Energy (mJ)
TOP
160
BOTTOM
ID
2.1A
3.8A
4.7A
0.10
120
0.08
80
0.06
I
D
= 4.7A
40
0.04
0
2
4
6
8
10
A
0
25
V
GS
, Gate-to-Source Voltage (V)
Starting T
J
, Junction Temperature (
°
C)
50
75
100
125
150
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
4
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