PD - 92547
IRF7343PbF
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Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free
HEXFET
®
Power MOSFET
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
D1
D1
D2
D2
N-Ch
V
DSS
55V
P-Ch
-55V
6
5
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
P-CHANNEL MOSFET
Top View
R
DS(on)
0.050Ω 0.105Ω
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
E
AR
V
GS
dv/dt
T
J,
T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
55
4.7
3.8
38
2.0
1.3
72
4.7
0.20
± 20
5.0
-55 to + 150
-5.0
114
-3.4
P-Channel
-55
-3.4
-2.7
-27
Units
V
A
W
W
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
R
θJA
www.irf.com
Maximum Junction-to-Ambient
Parameter
Typ.
Max.
62.5
Units
°C/W
1
10/7/04
IRF [ INTERNATIONAL RECTIFIER ]
