IRF7343PbF
1200
P-Channel
20
960
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
=
-3.1A
16
V
DS
=-48V
V
DS
=-30V
V
DS
=-12V
C, Capacitance (pF)
720
Ciss
12
480
8
Coss
240
4
Crss
0
1
10
100
0
0
10
20
30
40
-
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 20.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 21.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
100
0.1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 22.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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