IRF630N/S/L
1200
16
12
8
V
= 0V, f = 1 MHZ
= C + C , C SHORTED
I
D
=
5.4A
GS
C
V
V
V
= 160V
= 100V
= 40V
iss gs gd ds
DS
DS
DS
C
= C
gd
1000
800
600
400
200
0
rss
C
= C + C
oss
ds gd
Ciss
Coss
Crss
4
0
0
5
10
15
20
25
30
1
10
100
1000
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 175 C
J
100us
°
T = 25 C
J
1ms
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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