PD - 95485
AUTOMOTIVE MOSFET
IRF1407PbF
Typical Applications
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Lead-Free
HEXFET
®
Power MOSFET
D
V
DSS
= 75V
G
S
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
R
DS(on)
= 0.0078Ω
I
D
= 130A
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
®
Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
130
92
520
330
2.2
± 20
390
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
www.irf.com
1
06/30/04
IRF [ INTERNATIONAL RECTIFIER ]
