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IRF1407PBF 参数 Datasheet PDF下载

IRF1407PBF图片预览
型号: IRF1407PBF
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET㈢功率MOSFET [HEXFET㈢ Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 10 页 / 164 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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IRF1407PbF
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
avalanche losses
Avalanche Current (A)
100
0.01
0.05
10
0.10
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current vs.Pulsewidth
400
EAR , Avalanche Energy (mJ)
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
175
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 16.
Maximum Avalanche Energy
vs. Temperature
www.irf.com
7