IRFP460
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
20
UNITS
Continuous Source to Drain Current
I
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
-
-
-
-
A
A
SD
D
S
Pulse Source to Drain Current
(Note 3)
I
80
SDM
G
o
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
T = 25 C, I
J
= 21A, V
GS
= 0V (Figure 13)
-
-
1.8
1200
18
V
SD
SD
SD
SD
o
t
T = 25 C, I
J
= 21A, dI /dt = 100A/µs
SD
280
3.8
580
8.1
ns
µC
rr
o
Q
T = 25 C, I
= 21A, dI /dt = 100A/µs
SD
RR
J
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
o
4. V
= 50V, starting T = 25 C, L = 4.3mH, R
= 25Ω, Peak I = 20A.
GS AS
DD
J
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
20
16
12
8
4
0
25
50
75
T , CASE TEMPERATURE ( C)
C
100
125
150
0
50
100
150
o
o
T
, CASE TEMPERATURE ( C)
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.1
0.2
0.1
0.05
P
DM
0.02
0.01
-2
10
t
t
1
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R + T
J
DM
θJC
θJC C
-3
10
-5
-4
10
-3
-2
10
10
10
t , RECTANGULAR PULSE DURATION (S)
0.1
1
10
1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-361
INTERSIL [ Intersil ]
