IRFP460
Data Sheet
July 1999
File Number 2291.3
20A, 500V, 0.270 Ohm, N-Channel
Power MOSFET
Features
• 20A, 500V
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
• r
= 0.270Ω
DS(ON)
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA17465.
Ordering Information
Symbol
PART NUMBER
PACKAGE
BRAND
D
IRFP460
TO-247
IRFP460
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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